The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2004
Filed:
Dec. 03, 2002
Gen Tada, Nagano, JP;
Masaru Saito, Nagano, JP;
Fuji Electric Co., Ltd., Kawasaki, JP;
Abstract
A film thickness of a gate oxide film of a lateral high breakdown voltage MOSFET of a first conduction type is formed with a thickness in which an electric field value to an absolute maximum rated voltage between a source and a drain becomes equal to or less than 4 MV/cm, and a drain diffused layer is formed so that a total amount of impurities therein becomes equal to or more than 2×10 /cm to reduce an on-resistance of the lateral high breakdown voltage MOSFET while ensuing a breakdown voltage thereof, and to reduce an area of the lateral high breakdown voltage MOSFET.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile