The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2004
Filed:
Apr. 29, 2002
Christos G. Takoudis, Oak Park, IL (US);
Zhenjiang Cui, Santa Clara, CA (US);
The Board of Trustees of the University of Illinois, Urbana, IL (US);
Abstract
Ultrathin silicon oxide films thermally grown on Si(100) are characterized with Mirror-Enhanced Polarized Reflectance Fourier Transform Infrared spectroscopy (MEPR-FTIR). MEPR-FTIR is proposed to effectively probe properties of ultra-thin films. Using a mirror and a polarizer, MEPR-FTIR overcomes the difficulty of weak IR intensities normally encountered in ultrathin gate dielectrics such as SiO and the intensity of the silicon oxide longitudinal optical (LO) mode is found to increase by a factor of about 20. Therefore, FTIR spectrometers with sensitivity down to 0.01% may allow even sub-monolayer probing of silicon oxide on Si substrates.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile