The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2004
Filed:
Jan. 03, 2002
Yoshirou Tsurugida, Miyazaki, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
The whole areas of both surfaces ( and ) of a silicon wafer ( ) are covered by silicon nitride films ( ) respectively through the intermediary of pad oxide films ( and ), and the pad oxide film ( ) and the silicon nitride film ( ) on the front surface ( ) of the wafer are patterned in desired regions and therefore the front surface ( ) is partially exposed. On the other hand, the pad oxide film ( ) and the silicon nitride film ( ) on the reverse surface ( ) of the wafer are removed, so the whole area of the reverse surface ( ) is exposed. By simultaneously oxidizing the regions exposed partially on the front surface ( ) of the wafer and the whole area of the reverse surface ( ) of the wafer, silicon dioxide films ( and ) are grown on those areas of the wafer.