The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2004
Filed:
Jun. 28, 2002
Manuj Rathor, Santa Clara, CA (US);
Krishnaswamy Ramkumar, San Jose, CA (US);
Fred Jenne, Los Gatos, CA (US);
Loren Lancaster, Colorado Springs, CO (US);
Cypress Semiconductor Corporation, San Jose, CA (US);
Abstract
A method of forming a charge storing layer is disclosed. According to an embodiment, a method may include the steps of forming a first portion of a charge storing layer with a first gas flow rate ratio (step ), forming at least a second portion of the charge storing layer by changing to a second gas flow rate ratio that is different than the first gas flow rate ratio (step ), and forming at least a third portion of the charge storing layer by changing to a third gas flow rate ratio that is different than the second gas flow rate ratio (step ).