The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2004
Filed:
Feb. 10, 2003
Klaus F. Schuegraf, Aliso Viejo, CA (US);
Newport Fab, LLC dba Jazz Semiconductor, Newport Beach, CA (US);
Abstract
According to one exemplary embodiment, a heterojunction bipolar transistor comprises a base. The heterojunction bipolar transistor further comprises a first nitride spacer and a second nitride spacer situated on the base, where the first nitride spacer and the second nitride spacer are separated by a distance substantially equal to a critical dimension. For example, the first nitride spacer and the second nitride spacer may comprise LPCVD or RTCVD silicon nitride. According to this exemplary embodiment, the heterojunction bipolar transistor further comprises an emitter situated between said first nitride spacer and said second nitride spacer, where the emitter has a width substantially equal to the critical dimension. The emitter may, for example, comprise polycrystalline silicon. In another embodiment, a method that achieves the above-described heterojunction bipolar transistor is disclosed.