The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2004
Filed:
Oct. 11, 2002
Narihiro Morosawa, Nara, JP;
Abstract
A thin film transistor having a source region and a drain region having a low melting point region composed of a semiconductor with a melting point lower than that of the semiconductor of the channel region is provided. In the thin film transistor, the dopant concentrations of the low melting point region of the source region adjacent to the channel region and the low melting point region of the drain region adjacent to the channel region are precisely controlled. Using the thin film transistor, a high performance thin film transistor array substrate is also provided, as well as a high display speed liquid crystal display device and a high display speed electroluminescent display device having a high aperture ratio or a high pixel resolution.