The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2004
Filed:
May. 15, 2002
Robert Feurle, Neubiberg, DE;
Dominique Savignac, Ismaning, DE;
Infineon Technologies AG, Munich, DE;
Abstract
It is known to adapt the dimensions of transistors, in particular a layer thickness of a local gate oxide in a manner dependent on an operating voltage. Therefore, semiconductor circuits having transistors with different operating voltages are provided with transistors having gate oxides of different thicknesses. This allows the gate oxide thickness to be influenced even more extensively. In this case, account is taken of the fact that infrequently addressed transistors, in particular memory transistors given the same gate oxide thickness, have a significantly longer lifetime than frequently switched transistors. An integrated semiconductor circuit having transistors whose gate oxide thicknesses are adapted to the switching frequency having different magnitudes, is proposed.