The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 09, 2004

Filed:

Apr. 03, 2003
Applicant:
Inventors:

Brian R. Kauffmann, Pocatello, ID (US);

Charles A. Edmondson, Pocatello, ID (US);

James R. Brown, Idaho Falls, ID (US);

Assignee:

AMI Semiconductor, Inc., Pocatello, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/100 ;
U.S. Cl.
CPC ...
G11C 1/100 ;
Abstract

An SRAM memory includes a pull-up device coupled to each row of word lines in an array of SRAM cells. The pull-up devices are sized such that when a row is selected, the time for the associated word line to fully charge is sufficiently slow such that data stored in the selected SRAM cells are not corrupted during a read operation. By slowly charging the word lines, the corresponding access transistors are also slowly turned on, resulting in the coupled bit lines slowly charging or discharging from the data stored in the SRAM cell. Because there is not a sudden large charge transfer between the stored data and the coupled bit line, the data will not be corrupted during a read operation, and read precharge circuitry is not required.


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