The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2004
Filed:
Sep. 09, 2002
Applicant:
Inventor:
Yoshihiro Watanabe, Nagano-ken, JP;
Assignee:
Seiko Epson Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/228 ;
U.S. Cl.
CPC ...
H01G 4/228 ;
Abstract
A semiconductor device includes a TFT, a diode and a capacitor that each have an insulating layer which includes a tantalum oxide film formed by oxidizing a tantalum film at a temperature of 300° C. to 400° C. and under a pressure of 0.5 MPa to 2 MPa, and a silicon oxide film formed by a CVD method and the like. Therefore, the insulating layer includes the tantalum oxide film produced by high-pressure annealing and thus has high voltage resistance.