The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2004
Filed:
Aug. 22, 2002
Applicant:
Inventors:
Timothy A. Rost, Plano, TX (US);
Vijay Reddy, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 3/126 ;
U.S. Cl.
CPC ...
G01R 3/126 ;
Abstract
A method of testing integrated circuits for the effect of NBTI degradation. A static DC stress voltage is applied to the voltage supply input of the circuit. This circuit is held at this voltage for a given stress period. The application of the DC voltage is equivalent to applying a negative gate bias, and isolates the effects of NBTI degradation from CHC (channel hot carrier) degradation or other degradation that occurs when the circuit has a clocked input.