The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2004
Filed:
May. 14, 2003
Shigeaki Okawa, Tochigi, JP;
Koichiro Ogino, Gunma, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
A semiconductor integrated circuit device with built-in spark killer diodes suitable for output transistor protection has a problem such that a leakage current to the substrate is great and a desirable forward current cannot be obtained. In a semiconductor integrated circuit device of the present invention, P -type first and second diffusion regions and are formed on the surface of a second epitaxial layer in a partly overlapping manner. And, by a connection to an anode electrode at a part immediately over the P -type second diffusion region , a parasitic resistance R is made greater than a parasitic resistance R . Thus, an operation of a parasitic transistor TR that causes a leakage current to a substrate is suppressed, whereby leakage current can be greatly reduced.