The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2004
Filed:
Mar. 12, 2003
Osamu Uehara, Chiba, JP;
Jun Osanai, Chiba, JP;
Seiko Instruments Inc., Chiba, JP;
Abstract
A semiconductor device is provided in which: a parasitic capacitance between a drain and a supporting substrate is reduced; and a high electric field generated in the vicinity of the drain is relaxed and which has a high withstand voltage. A MOS transistor according to the present invention includes: a supporting substrate region in an SOT substrate; a buried insulating film formed on the supporting substrate region; a channel region formed on the buried insulating film; and first and second offset regions that are formed on the buried insulating film so as to be adjacent to the channel region on both sides thereof, and further includes an impurity diffusion region formed in a portion positioned below the second offset region in the supporting substrate region.