The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2004
Filed:
Jan. 22, 2003
Applicant:
Inventors:
Reed W. Adams, Plano, TX (US);
William E. Grose, Plano, TX (US);
Sameer Pendharkar, Richardson, TX (US);
Roland Bucksch, Richardson, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/9788 ;
U.S. Cl.
CPC ...
H01L 2/9788 ;
Abstract
Disclosed are devices and associated methods for manufacturing an EEPROM memory cell ( ) for use on a negatively biased substrate ( ). The invention may be practiced using standard semiconductor processing techniques. Devices and methods are disclosed for a floating gate transistor for use as an EEPROM cell ( ) including a DNwell ( ) formed on a P-type substrate ( ) for isolating the EEPROM cell ( ) from the underlying P-type substrate ( ).