The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2004
Filed:
Dec. 13, 2002
Applicant:
Inventors:
Akira Inoue, Kadoma, JP;
Takeshi Takagi, Kyoto, JP;
Yoshihiro Hara, Hirakata, JP;
Minoru Kubo, Nabari, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/10328 ;
U.S. Cl.
CPC ...
H01L 3/10328 ;
Abstract
A semiconductor layer of a graded SiGe-HDTMOS is constructed of an upper Si film , an Si buffer layer , an Si Ge film and an Si cap layer . The region between a source region and drain region of the semiconductor layer includes a high concentration n-type Si body region and an n Si region , an Si cap region and an SiGe channel region . A Ge composition ratio x of the Si Ge film is made to increase from the Si buffer layer to the Si cap layer . For the p-type HDTMOS, the electron current component of the substrate current decreases.