The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2004
Filed:
Jun. 24, 2003
Takahisa Kurahashi, Kashiba, JP;
Tetsurou Murakami, Tenri, JP;
Shouichi Ohyama, Nara-ken, JP;
Hiroshi Nakatsu, Mihara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A resonant cavity type light emitting diode has a first DBR made of n-type AlAs or Al Ga As, a quantum well active layer, a second DBR made of p-type (Al Ga ) In P or Al In P, and an n-type current constriction layer on an n-type GaAs substrate. The first DBR and the second DBR form a resonator. The quantum well active layer is formed in a position of an antinode of a standing wave inside the resonator. Between the second DBR and the current constriction layer, there is provided a p-type GaP etching protection layer that has a value obtained by dividing resistivity by thickness being 1×10 &OHgr; or more. Since a current in a current flow pass formed in the current constriction layer hardly diffuses to the outside of the current flow pass, there is generated few region with low current density that causes deterioration of responsespeed in a quantum well layer. Thus, the light emitting diode has an excellent high-speed response.