The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2004
Filed:
Nov. 20, 2001
Kazuhiko Horikoshi, Yokohama, JP;
Kiyoshi Ogata, Kawasaki, JP;
Miwako Nakahara, Yokohama, JP;
Takuo Tamura, Yokohama, JP;
Yasushi Nakano, Mobara, JP;
Ryoji Oritsuki, Shirako, JP;
Toshihiko Itoga, Hino, JP;
Takahiro Kamo, Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
To a polycrystalline silicon layer crystallized by irradiation with laser light, a mixed gas comprised of ozone gas and H O or N O gas is fed at a processing temperature of 500° C. or below, or the polycrystalline silicon layer is previously treated with a solution such as ozone water or an aqueous NH /hydrogen peroxide solution, followed by oxidation treatment with ozone, to form a silicon oxide layer with a thickness of 4 nm or more at the surface of the polycrystalline silicon layer for forming a thin-film transistor having characteristics that are less varying on a glass substrate previously not annealed.