The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2004
Filed:
Oct. 23, 2002
Wim Geens, Mechelen, BE;
Jef Poortmans, Kessel-Lo, BE;
Tom Aernouts, Tremelo, BE;
Hieronymus Andriessen, Beerse, BE;
Dirk Vanderzande, Hasselt, BE;
Other;
Abstract
An organic field-effect transistor comprises source and drain electrodes formed separately from each other on a substrate, wherein the substrate comprises at least an organic semiconductor layer constituting a channel between the source and drain electrodes, an insulation layer underlying the organic semiconductor layer, and a gate electrode formed on the opposite side of the isolation layer. The organic semiconductor layer comprises hole and electron transporters, wherein the electron transporters comprise (6,6)-phenyl C61-butyric acid methyl ester (PCBM), and wherein the hole transporters comprise poly(2-methoxy-5-(3′,7′-dimethyloctyloxy)-1,4-phenylene-vinylene)(OC C -PPV) and/or poly(3-hexylthiophene) (P3HT).