The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2004
Filed:
Oct. 05, 2001
Method for monitoring deposition reaction during processing the surface of a semiconductor substrate
Koji Suzuki, Chiba, JP;
Kawasaki Microelectronics Inc., Chiba, JP;
Abstract
A semiconductor manufacturing apparatus and a method for processing a surface of a substrate are provided, which can realize a process at a constant etching rate, a low microloading effect, high selectivity, high reproducibility, and high dimensional controllability. The semiconductor manufacturing apparatus generates plasma by supplying electromagnetic waves to a gas atmosphere and processes the surface of the substrate with charged species in the plasma accelerated by a bias voltage applied to the substrate. At least the bias voltage is measured and at least the electrical power of the electromagnetic waves is controlled such that the bias voltage is controlled.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile