The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2004
Filed:
Dec. 30, 2002
John D. Baniecki, Kanagawa, JP;
Robert B. Laibowitz, Cortlandt Manor, NY (US);
Christopher C. Parks, Poughkeepsie, NY (US);
Thomas M. Shaw, Peekskill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of substantially reducing and/or eliminating the amount of defects and/or impurities that amass at interfacial surfaces that are present in a multilayer structure is provided. Specifically, the method improves the efficiency of a forming gas anneal by providing a multilayer structure having a catalytic layer formed thereon or buried therein which allows for a significant increase in the amount of hydrogen or deuterium which can be incorporated into the structure. The method is also conducted at a low temperature (on the order of about 400° C. or less). Multilayer structures are also provided which include an annealed multilayer structure having at least one interfacial surface present therein. The at least one material interface contains a region of hydrogen or deuterium which substantially reduces defects and impurities present at the at least one interface.