The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2004
Filed:
Jan. 08, 2004
Yoshifumi Watabe, Tondabayashi, JP;
Koichi Aizawa, Neyagawa, JP;
Takuya Komoda, Sanda, JP;
Takashi Hatai, Neyagawa, JP;
Yoshiaki Honda, Souraku-gun, JP;
Matsushita Electric Works, Ltd., Osaka, JP;
Abstract
Disclosed is a method for the electrochemical oxidation of a semiconductor layer. In an electrochemical oxidation treatment for the production process of an electron source (field-emission type electron source) as one of electronic devices, a control section determines a voltage increment due to the resistance of an electrolytic solution B in advance, based on a detected voltage from a resistance detect section . Then, the control section controls a current source to supply a constant current so as to initiate an oxidation treatment for a semiconductor layer formed on an object . The control section corrects a detected voltage from a voltage detect section by subtracting the voltage increment therefrom. When the corrected voltage reaches a given upper voltage value, the control section is operable to discontinue the output of the current source and terminate the oxidation treatment. The present invention allows electronic devices to be produced with reduced variation in the characteristics thereof.