The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2004
Filed:
Dec. 21, 2001
Applicant:
Inventors:
Alan Sangone Chen, Windermere, FL (US);
Yih-Feng Chyan, New Providence, NJ (US);
Chung Wai Leung, Milpitas, CA (US);
Yi Ma, Orlando, FL (US);
William John Nagy, Orlando, FL (US);
Assignee:
Agere Systems Inc., Allentown, PA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18228 ;
U.S. Cl.
CPC ...
H01L 2/18228 ;
Abstract
The present invention provides a method of manufacturing a bipolar transistor. The method may comprise forming a collector in a semiconductor wafer substrate, forming a base in the collector, implanting an oxide region within said collector and over the base, and forming an emitter over the substrate such that the oxide region is located between the emitter and the base.