The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2004
Filed:
Mar. 27, 2001
Applicant:
Inventor:
Norihiko Kiritani, Kanagawa-ken, JP;
Assignee:
Nissan Motor Co., Ltd., Kanagawa-Ken, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A method for manufacturing a SiC device embraces (a) depositing a polysilicon film above a SiC substrate; (b) delineating the polysilicon film into required pattern; and (c) annealing the SiC substrate in a water rich ambient to selectively grow a thick localized thermal oxide film above the SiC substrate. At the surface of SiC substrate, source/drain regions and substrate contact region are formed. In the water rich ambient, the H O partial pressure is so maintained that it is more than 0.95.