The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2004
Filed:
Oct. 28, 1999
Shuichi Ueno, Tokyo, JP;
Yoshinori Okumura, Tokyo, JP;
Shigenobu Maeda, Tokyo, JP;
Shigeto Maegawa, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
In a semiconductor device and a method of manufacturing the same according to the present invention, a trade-off relationship between threshold values and a diffusion layer leakage is eliminated and it is not necessary to form gate oxide films at more than one stages. Since doses of nitrogen are different from each other between gate electrodes ( A to C) of N-channel type MOS transistors (T to T ), concentrations of nitrogen in the nitrogen-introduced regions (N to N ) are accordingly different from each other. Concentrations of nitrogen in the gate electrodes are progressively lower in the order of expected higher threshold values.