The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2004
Filed:
Oct. 19, 2001
Tomoyuki Hirano, Kanagawa, JP;
Kazumi Asada, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
Provided is a method of manufacturing a semiconductor device capable of effectively removing impurity product attached to a semiconductor film while suppressing coming off of, for example, hemispherical grains formed on a semiconductor film containing an impurity. Spherical or hemispherical grains are formed on the surface of an amorphous silicon film containing phosphorus which forms a bottom electrode of a capacitor. In order to suppress depletion of the bottom electrode, annealing is performed in PH atmosphere so as to diffuse phosphorus to the grains. Cleaning is performed using hot water (deionized water) in order to remove the impurity product attached onto the surface of the bottom electrode by annealing. A native oxide film formed on the surface of the bottom electrode is removed by cleaning using a mixed solution of hydrofluoric acid and water. A dielectric film and a top electrode are formed in order so as to cover the surface of the bottom electrode. Thereby, a cylindrical capacitor is fabricated.