The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2004
Filed:
Nov. 06, 2001
Nobuhiko Oda, Hashima, JP;
Toshifumi Yamaji, Aichi, JP;
Shiro Nakanishi, Ogaki, JP;
Yoshihiro Morimoto, Inazawa, JP;
Kiyoshi Yoneda, Gifu, JP;
Sanyo Electric Co., Ltd., , JP;
Abstract
In a bottom gate-type thin-film transistor manufacturing method, after ion doping, an ion stopper is removed. The ion stopper does not remain in the interlayer insulating film lying immediately above the gate electrode. The thin-film transistor has such a structure that no ion stopper, and the interlayer insulating layer is in direct contact with at least the channel region of the semiconductor layer. The impurity concentration in the vicinity of the interface between the interlayer insulating film and the semiconductor layer is 10 atoms/cc or less. This structure can prevent the back channel phenomenon and reduce variations in characteristic resulting from variations in manufacturing.