The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2004
Filed:
Dec. 30, 2002
John C. Rodgers, Fairfax, VA (US);
Jon D. Maimon, Manassas, VA (US);
Other;
Abstract
A method for manufacturing sidewall contacts for a chalcogenide memory device is disclosed. A first conductive layer is initially deposited on top of a first oxide layer. The first conductive layer is then patterned and etched using well-known processes. Next, a second oxide layer is deposited on top of the first conductive layer and the first oxide layer. An opening is then etched into at least the first oxide layer such that a portion of the first conductive layer is exposed within the opening. The exposed portion of the first conductive layer is then removed from the opening such that the first conductive layer is flush with an inner surface or sidewall of the opening. After depositing a chalcogenide layer on top of the second oxide layer, filling the opening with chalcogenide, a second conductive layer is deposited on top of the chalcogenide layer.