The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2004
Filed:
Jan. 15, 2003
Hee Chul Lee, Daejeon, KR;
Ki Dong Yang, Busan, KR;
Agency for Defense Development, Daejeon, KR;
Abstract
A method for manufacturing an infrared detector forms a p-n junction by forming a low concentration p type HgCdTe layer, forming a diffusion preventing layer for exposing some upper part of the low concentration p type HgCdTe layer, and by forming a low concentration n type HgCdTe layer by diffusing hydrogen ions and atoms to the low concentration p type HgCdTe layer using hydrogen plasma. The hydrogen ions or atoms are diffused on some of the low concentration p type HgCdTe layer to be a predetermined depth using the hydrogen plasma to form the low concentration n type HgCdTe layer in order to prevent an interface of the p-n junction from damaging, and thereby leakage current can be prevented, fabrication cost is not increased and yield is increased due to simple processes.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile