The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 09, 2004

Filed:

Feb. 13, 2003
Applicant:
Inventors:

Ronald C. Gonsiorawski, Danvers, MA (US);

Grace Xavier, Billerica, MA (US);

Assignee:

RWE Schott Solar Inc., Billerica, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract

In the manufacture of a wafer-type silicon solar cell having on its front side a silicon nitride AR coating and an electrical contact that is formed by printing a thick film metal ink onto the silicon nitride in the form of a grid-like pattern having narrow fingers and then firing that ink to convert it to a bonded metal contact, a surface treatment method is provided to adjust the condition of the surface of the silicon nitride coating in a manner that substantially improves the adherence of the thick film ink to the silicon nitride coating, thereby eliminating or substantially inhibiting the tendency of the narrow fingers of the unfired ink to peel away before the ink has been fired to produce the electrical contact. The surface treatment method comprises subjecting the silicon nitride layer to a corona discharge using a plasma jet and is readily incorporated into the manufacturing process sequence without requiring any modification of existing stages of that sequence.


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