The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2004
Filed:
Sep. 19, 2002
Oscar Apeldoorn, Bettwil, CH;
Eric Carroll, Leutwil, CH;
Peter Streit, Widen, CH;
André Weber, Olten, CH;
ABB Schweiz AG, Baden, CH;
Abstract
The integrated gate dual transistor (IGDT) has two controllable gates (G , G ), a first gate (G ) being provided on the cathode side and being driven via a low-inductance first gate terminal with a first gate current, and a second gate (G ) being provided on the anode side and being driven via a low-inductance second gate terminal with a second gate current. In the switch-off operation of the IGDT, the rate of rise of the voltage across the IGDT is limited via the two gates. Limiting the rate of rise of the voltage across the IGDT prevents voltages from building up at different speeds in a series circuit of IGDTs, and thus unequal loads from overheating and destroying the individual IGDTs.