The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2004
Filed:
Dec. 02, 2003
Applicant:
Inventor:
Olivier Menut, Grenoble, FR;
Assignee:
STMicroelectronics S.A., Montrouge, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10L 2/900 ;
U.S. Cl.
CPC ...
H10L 2/900 ;
Abstract
The semiconductor substrate of the integrated circuit includes at least one dielectrically isolating, vertical buried trench ( ) having a height at least five times greater than its width, the trench laterally separating two regions ( ), and an epitaxial semiconductor layer ( ) coveting the trench. An application is advantageously suited to MOS, CMOS and BiCMOS technologies.