The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2004
Filed:
Sep. 05, 2002
Akihiko Ebina, Fujimi-machi, JP;
Susumu Inoue, Sakata, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
A semiconductor device of the present invention includes memory cells. Each of the memory cells includes a word gate formed over a semiconductor substrate with a second gate insulating layer interposed therebetween, an impurity layer, and first and second control gates in the shape of sidewalls. The first and second control gates adjacent to the impurity layer interposed therebetween is connected with a common contact section. The common contact section includes a contact conductive layer, a stopper insulating layer, and a cap insulating layer. The contact conductive layer is continuous with the first and second control gates. The cap insulating layer is formed at least over the stopper insulating layer.