The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2004
Filed:
Nov. 26, 2001
Peter Rabkin, Cupertino, CA (US);
Hsingya Arthur Wang, San Jose, CA (US);
Kai-Cheng Chou, San Jose, CA (US);
Hynix Semiconductor, Inc., , KR;
Abstract
A non-volatile memory cell includes a first insulating layer over a substrate region, and a floating gate. The floating gate includes a first polysilicon layer over the first insulating layer and a second polysilicon layer over and in contact with the first polysilicon layer. The first polysilicon layer has a predetermined doping concentration and the second polysilicon layer has a doping concentration which decreases in a direction away from an interface between the first and second polysilicon layers. A second insulating layer overlies and is in contact with the second polysilicon layer. A control gate includes a third polysilicon layer over and in contact with the second insulating layer, and a fourth polysilicon layer over and in contact with the third polysilicon layer. The fourth polysilicon layer has a predetermined doping concentration, and the third polysilicon layer has a doping concentration which decreases in a direction away from an interface between the third and fourth polysilicon layers.