The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 02, 2004

Filed:

Nov. 19, 2002
Applicant:
Inventors:

Hormuzdiar E. Nariman, Austin, TX (US);

Derick J. Wristers, Bee Caves, TX (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/710 ;
U.S. Cl.
CPC ...
H01L 2/710 ;
Abstract

A semiconductor device includes a grating structure having a plurality of parallel lines, and at least one of the multiple parallel lines is a gate electrode line of a transistor, which includes source/drain regions proximate to the gate electrode line, and vias extending to the gate electrode line and the source/drain regions. A method of manufacturing the semiconductor device is also disclosed.


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