The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2004
Filed:
Jun. 23, 2003
Tie-Jiang Wu, Ilan, TW;
Chien-Chang Huang, Taipei, TW;
Yu-Wei Ting, Taipei, TW;
Bo-Ching Jiang, Hualien, TW;
Tse-Main Kuo, Taipei, TW;
Nanya Technology Corporation, Taoyuan, TW;
Abstract
A test key for validating the doping concentration of buried layers within a deep trench capacitor. The test key is deposited in the scribe line region of a wafer. In the test key of the present invention, the deep trench capacitor is deposited in the scribe line region and has three buried layers of three doping concentrations. An isolation region is deposited in the capacitor, and a first plug, a second and a third plug are coupled to three positions of one buried layer of the three respectively. The present invention determines whether the doping concentration of buried layers within a deep trench capacitor is valid by a first resistance measured between the first plug and the second plug and a second resistance measured between the second plug and the third plug.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile