The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2004
Filed:
Apr. 11, 2000
Joseph Travis Kennedy, San Jose, CA (US);
Henry Chung, Hsinchu, TW;
Anna George, Sunnyvale, CA (US);
Honeywell International Inc., Morristown, NJ (US);
Abstract
Dual damascene methods of fabricating conducting lines and vias in organic intermetal dielectric layers utilize sacrificial inorganic dielectrics. In one embodiment, a via opening formed in organic intermetal dielectric layers is filled with sacrificial inorganic dielectric. A line opening is formed aligned with the via opening. The sacrificial inorganic dielectric is selectively removed. The via and line openings are filled with conducting material. In a second embodiment, a line opening formed in organic intermetal dielectric layers is filled with sacrificial inorganic dielectric. A via opening is formed aligned with the line opening. The sacrificial inorganic dielectric is selectively removed. The via and line openings are filled with conducting material. The sacrificial inorganic dielectrics protect the organic intermetal dielectric layers, preserving critical dimensions and facilitating photoresist rework. The sacrificial inorganic dielectrics are removed without damaging the organic intermetal dielectric layers.