The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2004
Filed:
Sep. 08, 2003
Applicant:
Inventors:
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/18234 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/18234 ;
Abstract
An interlayer insulating film ( ) that is formed on a substrate ( ) so as to cover TFTs ( ) is planarized by mechanical polishing that is typified by CMP. Pixel electrodes ( ) are formed on the interlayer insulating film ( ) and an insulating layer ( ) is formed so as to cover the pixel electrodes. The insulating layer ( ) is planarized by second mechanical polishing so that the surfaces of the pixel electrodes become flush with those of resulting buried insulating layers ( ). Since the pixel electrode surfaces have no steps, such problems as alignment failures of a liquid crystal material and a contrast reduction due to diffused reflection of light can be prevented.