The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2004
Filed:
Apr. 05, 2002
Hirofumi Kobayashi, Shiojiri, JP;
Seiko Epson Corporation, , JP;
Abstract
As shown in FIG. ( ), a gate oxide film is formed on an Si substrate . A polysilicon layer is formed thereon. A natural oxide film having an arbitrary thickness is formed on the polysilicon layer after phosphorus is made to diffuse into the polysilicon layer and before a resist layer is coated. Thus, as shown in FIG. ( ), the natural oxide film present on the polysilicon layer is removed by DHF cleaning (cleaning with dilute HF). Thereafter, a resist layer is coated onto the polysilicon layer , and is patterned. A polysilicon gate electrode G is formed by dry-etching using the resist layer as a mask.
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