The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2004
Filed:
Mar. 06, 2001
Applicant:
Inventors:
Masami Hayashi, Hyogo, JP;
Masanao Kobayashi, Nagano, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
A highly reliable semiconductor device is provided. The semiconductor device is provided with a thin film field-effect transistor having a channel region and includes a substrate and a semiconductor film. The semiconductor film is formed on the substrate and includes the channel region of the thin film field-effect transistor. An upper surface of the semiconductor film is planarized by removing a surface layer of the semiconductor film.
Quick Actions:
Hayashi, Masami. (2004). Method of producing crystalline semiconductor film and semiconductor device from the film (U.S. Patent No. 6812071). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6812071
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile