The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2004
Filed:
May. 02, 2003
Tien-Rong Lu, Tainan, TW;
RITdisplay Corporation, Hsin Chu Industrial Park, TW;
Abstract
A method for fabricating a low temperature polysilicon organic electroluminescent substrate comprises the following steps: providing a substrate; forming an amorphous silicon layer on the substrate; forming a plurality of patterned transistor elements each having a patterned source, a patterned drain and a patterned gate on the amorphous silicon layer by photolithography and ion doping; annealing the patterned transistor element having the patterned source, drain and gate by excimer laser; forming a plurality of patterned stripe second conductive lines connected to the gates on the surface of the substrate; forming a patterned isolation layer on the gate layer, and also forming a plurality of patterned stripe first conductive lines and a patterned first electrode on the substrate; forming at least one organic electroluminescent medium on the first electrode; and forming a second electrode layer on the organic electroluminescent medium.