The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2004
Filed:
Jun. 10, 2003
Kazuaki Kondo, Kawasaki, JP;
Hideyuki Noshiro, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
Provided is a method of manufacturing a ferroelectric capacitor capable of manufacturing a ferroelectric capacitor with lower unevenness on a ferroelectric film surface, and thereby with excellent electric characteristics. By sputtering method, a PZT film is formed on a first conductive film, which constitutes a lower electrode of the ferroelectric capacitor. Thereafter, the PZT film is subjected to crystallization treatment (annealing). Next, a silicate solution is coated on the PZT film as a sintering assistance and then dried. Subsequently, sintering treatment is performed at the temperature of about 700° C. In this way, crystals constituting the PZT film are sintered, unevenness on the surface of PZT film is reduced, and tiny pores in grain boundaries are also reduced.