The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2004
Filed:
Jul. 02, 2003
Applicant:
Inventors:
Sudhir K. Madan, Richardson, TX (US);
Hugh McAdams, McKinney, TX (US);
John Y. Fong, Allen, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/122 ;
U.S. Cl.
CPC ...
G11C 1/122 ;
Abstract
A memory circuit and method for reducing gate oxide stress is disclosed. The circuit includes a memory cell for storing data. The memory cell has a first and a second control terminal and a pass transistor . The pass transistor has a control gate coupled to the first control terminal. The memory circuit includes a drive circuit having an output terminal coupled to the second control terminal. The drive circuit is arranged to produce a control signal PL having a rise time and a fall time, wherein the fall time is greater than the rise time.