The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2004
Filed:
Aug. 12, 2003
Shuji Katoh, Hitachiota, JP;
Shigeta Ueda, Hitachi, JP;
Hiromitsu Sakai, Tokai, JP;
Takashi Ikimi, Hitachi, JP;
Tomomichi Ito, Hitachi, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor power converting apparatus including at least one series arrangement of MOS control semiconductor devices such as Insulator-gate Bipolar Transistors (IGBTs) or metal oxide MOS transistors which are respectively applied with a gate voltage under the control of corresponding a driver. The driver contains a supply line having a higher potential than a gate voltage of an IGBT coupled thereto when the IGBT is in a steady ON state, and is such that is causes an increase of the gate voltage of the IGBT in accordance with the current of the supply line when a potential difference between the power supply line and an emitter of the IGBT is constant and the collector voltage thereof exceeds a predetermined value under an ON state of the IGBT.