The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2004
Filed:
Mar. 01, 2002
Applicant:
Inventors:
Steven Mark Anlage, Laurel, MD (US);
David E. Steinhauer, Brier, WA (US);
Constantine P. Vlahacos, Baltimore, MD (US);
Frederick C. Wellstood, Lanham, MD (US);
Assignee:
University of Maryland, College Park, Riverdale, MD (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 3/1302 ;
U.S. Cl.
CPC ...
G01R 3/1302 ;
Abstract
A near-field scanning microwave microscope images the permittivity and dielectric tunability of bulk and thin film dielectric samples on a length scale of about 1 micron or less. The microscope is sensitive to the linear permittivity, as well as to non-linear dielectric terms, which can be measured as a function of an applied electric field. A versatile finite element model is used for the system, which allows quantitive results to e obtained. The technique is non-destructive and has broadband (0.1-50 GHz) capability.