The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2004
Filed:
Nov. 25, 2002
Peter J. Zdebel, Austin, TX (US);
Misbahul Azam, Gilbert, AZ (US);
Gary H. Loechelt, Tempe, AZ (US);
James R. Morgan, Chandler, AZ (US);
Julio C. Costa, Greensboro, NC (US);
Semiconductor Components Industries, L.L.C., Phoenix, AZ (US);
Abstract
An integrated circuit ( ) includes high performance complementary bipolar NPN and PNP vertical transistors ( ). The NPN transistor is formed on a semiconductor substrate whose surface ( ) is doped to form a PNP base region ( ). A film ( ) is formed on the surface with an opening ( ) over an edge of the base region. A first conductive spacer ( ) is formed along a first sidewall ( ) of the opening to define a PNP emitter region ( ) within the base region. A second conductive spacer ( ) is formed along a second sidewall ( ) of the opening to define a PNP collector region ( ).