The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2004
Filed:
Aug. 01, 2003
Teiichiro Nishizaka, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
A 2-bit cell is made up by first and second diffusion regions provided in a substrate surface in separation from each other, first and second dielectric films provided on the substrate adjacent to the first and second diffusion region, first and second gate electrodes provided on first and second dielectric films, a third insulating film provided on the substrate and a third gate electrode provided on the third insulating film. The first and second gate electrodes are connected common to form word line electrodes. A control gate electrode extending in a direction at right angles to the word line electrodes and a third diffusion region in the substrate surface disposed at a longitudinal end of the control gate electrode are provided. In reading a storage node Node of interest, read operation is performed with the control gate channel as a drain, such that the storage node Node of interest is read without the intermediary of the node Node which is not of interest, with the consequence that read of the node Node is not affected by the node Node which is not of interest.