The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2004
Filed:
Jun. 13, 2003
Tetsuya Okada, Kumagaya, JP;
Mitsuhiro Yoshimura, Oizumi-machi, JP;
Tetsuya Yoshida, Oizumi-machi, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
In a semiconductor device, a variable-potential insulated electrode and a gate region are kept at the same potential through an aluminum layer. This device is mainly used as a voltage-driving type semiconductor device. By varying the voltage applied to the variable-potential insulated electrode through a gate electrode, a conductive path is formed in a channel region to switch on the device. The channel region turns into an N-type region when a positive potential is applied to the gate electrode, and turns into a pseudo P-type region when a ground potential or negative potential is applied to the gate electrode.