The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2004
Filed:
Jun. 09, 1999
Applicant:
Inventors:
Vincent Berger, Paris, FR;
Philippe Bois, Cesson, FR;
Assignee:
Thomson-CSF, Paris, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1338 ;
U.S. Cl.
CPC ...
H01L 2/1338 ;
Abstract
A quantum well made out of a the stack of layers of III-V semiconductor materials comprises, in addition to the quantum well, an electron storage layer separated from the quantum well by a transfer barrier layer. The barrier layer has a thickness that is greater than the thickness of the quantum well by about one order of magnitude. This barrier thus enables the separation of the absorption function (in the quantum well) and the function of reading the photocarriers (in the storage layer) and therefore the limiting of the rate of recombination of the carriers, thus improving the performance characteristics of the detector.