The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2004
Filed:
Jan. 28, 2002
Applicant:
Inventor:
Hiroyuki Miwa, Kanagawa, JP;
Assignee:
Sony Corporation, , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1331 ; H01L 2/122 ; H01L 2/900 ; H01L 2/7082 ; H01L 2/7102 ;
U.S. Cl.
CPC ...
H01L 2/1331 ; H01L 2/122 ; H01L 2/900 ; H01L 2/7082 ; H01L 2/7102 ;
Abstract
A bipolar transistor has a high performance and high reliability, which are obtained by enhancing a withstanding voltage between an emitter and a base. The bipolar transistor includes a first impurity diffusion layer in a semiconducting substrate, an opening disposed in the first conductive film. A third impurity diffusion layer is formed so as to contain the second diffusion layer and side walls are formed on the side walls of the opening. A fourth impurity diffusion layer in the third impurity diffusion layer is formed in the opening surrounded by the side walls.