The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2004
Filed:
Feb. 05, 1998
Applicant:
Inventors:
Hung-Sheng Chen, San Jose, CA (US);
Yowjuang W. Liu, San Jose, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/176 ;
Abstract
A method for making a self-aligned isolated memory core for a flash memory wafer includes the steps of establishing control gates for memory cells in the core by depositing a first polysilicon layer on a silicon substrate, etching the first layer, and depositing a second polysilicon layer on the substrate, with the polysilicon layers being separated by an interpoly dielectric layer. Then, after the control gates have been established, isolation trenches are formed in the silicon substrate between regions by self-aligned etching processes.