The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2004
Filed:
Mar. 17, 2004
Meng-Hung Chen, Taoyuan, TW;
Nanaya Technology Corporation, Taoyuan, TW;
Abstract
A method for forming a contact opening is provided. After forming transistors on a substrate, a stacked resist layer including a resist layer without a silicon element and a resist layer with a silicon element covers the transistors and the substrate. The stacked resist layer is defined to cover a region of a contact opening to be formed as a mask. A selective growth process, such as a liquid phase oxide deposition (LPOD), is carried out to form a selective silicon oxide layer on the silicon-containing surface and fills the space between the stacked resist layer. After the stacked resist layer is removed, a contact opening is formed in the silicon oxide layer and a step of the etching process is eliminated.